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H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor

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Guangzhou Topfast Technology Co., Ltd.

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H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor

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Brand Name :	Infineon Technoctifier Ilogies/International ReOR
Model Number :	IHW30N160R2FKSA1
Payment Terms :	T/T
Delivery Time :	2~8 workdays
MOQ :	1 pc
Price :	Negotiated

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H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor

Product Description

IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series

Applications:
• Inductive Cooking
• Soft Switching Applications

Description:

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1
for target applications
• Pb-free lead plating; RoHS compliant

Specification:IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1

Part number	IHW30N160R2
Category	Discrete Semiconductor Products
	Transistors - IGBTs - Single
Series	TrenchStop®
Package	Tube
IGBT Type	NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1600 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	90 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 30A
Power - Max	312 W
Switching Energy	4.37mJ
Input Type	Standard
Gate Charge	94 nC
Td (on/off) @ 25°C	-/525ns
Test Condition	600V, 30A, 10Ohm, 15V
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3-1

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